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1 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 4 parameters units typical frequency mhz 900 2000 2000 2000 2600 gain db 20 14.5 14.3 14 11.5 s11 db - 14 - 7 - 7 - 7 - 7 s22 db - 13 - 11 - 11 - 11 - 10 output ip3 1) dbm 42.5 46 42 40 37 noise figure db 4.2 5.6 4.6 4.1 4.2 o utput p1db dbm 29 29 27 26.5 29 current ma 155 185 155 123 155 device voltage v 5 5.3 5 4.75 5 1) oip3 is measured with two tones at an output power of +8 dbm/tone @ 5.3v & +6 dbm/tone @ 5v & +4 dbm/tone @ 4.75v separated by 1 mhz. parameters units min typ max testing frequency mhz 2000 gain db 13.5 14.3 s11 db - 9 s22 db - 11 output ip3 dbm 40 42 noise figure db 4.6 output p1db dbm 26.5 27 current ma 140 155 170 device voltage v 5 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +6 v operating junction temper a ture + 150 c input rf power ( c ontinuous) 22 dbm feature s description typical perfor m ance absolute maximum ratings 14 d b gain at 2000 mhz 27 dbm p1db at 2000 mhz 42 dbm oip3 at 2000 mhz aclr @ wcdma 4fa : - 51 dbc @ pout =13 dbm, +/ - 5mhz offset mttf > 100 years single supply the ASX415, a power amplifier mmic, has a high linea r ity , high gain, and high efficiency ove r a wide range of frequency, being sui t able for use in both receiver and transmitter of telecommunication sy s- tems up to 4 ghz. the amplifier is available in a n sot - 89 package and passes through the stringent dc, rf, and reliability tests. application circuit 433 ~ 444mhz cdma satellite phone wcdma wimax lte ( 2300 ~ 2700mhz) product specifications ASX415 package style: sot - 89 pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias
2 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out / bias mounting recommendation (in mm) outline drawing note : 1. the number and size of ground via holes in a circuit board is c ritical for thermal and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.4 0 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 as x415 pxxxx lot no. part no. part number description orderi ng information 3 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1 ) oip3 is measured with two tones at an output power of + 5 dbm/tone sep a- rated by 1mhz. c1=100 pf c2=100 pf vs=5 v rf in rf out c4=100pf c5=1 m f ASX415 d1=5.6v zener diode c3=12 pf l1=82 nh (coil inductor) l2=12 nh l3=8.2 nh l4=8.2 nh 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 300 350 400 450 500 550 600 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 300 350 400 450 500 550 600 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 300 350 400 450 500 550 600 0 5 10 15 20 25 gain (db) frequency (mhz) board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 433 444 magnitude s21 (db) 22 22 magnitude s11 (db) - 18 - 18 magnitude s22 (db) - 16 - 15 output p1db (dbm) 28 28 output ip3 1) (dbm) 35 37 noise figure (db) 6.5 6 device vo ltage (v) 5 5 current (ma) 155 155 433~444 +5 v 4 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +7 dbm/tone @ 5.3v & +6 dbm/tone @ 5v & +4 dbm/tone @ 4.75v separated by 1mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor cdma rx 824 ~ 849 +5.3 v / +5 v / +4.75 v 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 600 700 800 900 1000 1100 1200 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c frequency (mhz) 824~849 magnitude s21 (db) 20.3 20 19.8 magnitude s11 (db ) - 15 - 15 - 14 magnitude s22 (db) - 12 - 12 - 12 output p1db (dbm) 28.5 28.5 28 output ip3 1) (dbm) 45 41 35 noise figure (db) 5.2 4.4 4.2 device voltage (v) 5.3 5 4.75 current (ma) 185 155 123 c1=100 pf c2=100 pf vcc=5 v rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=7.5 pf c4=4.7 pf l1=68 nh (coil inductor) l2=8.2 nh l3=3.3 nh application circuit 5 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier noise figure vs. temperature current vs. temperature p1db vs. temperature gain vs. temperature output ip3 vs . tone power (frequency = 835 mhz) -60 -40 -20 0 20 40 60 80 100 80 100 120 140 160 180 200 current (ma) temperature ( o c) frequency = 835 mhz -60 -40 -20 0 20 40 60 80 100 14 16 18 20 22 24 26 gain (db) temperature ( o c) frequency = 835 mhz -60 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 noise figure (db) temperature ( o c) frequency = 835 mhz -60 -40 -20 0 20 40 60 80 100 20 22 24 26 28 30 32 34 36 p1db (dbm) temperature ( o c) frequency = 835 mhz 4 5 6 7 8 9 10 11 12 13 14 0 10 20 30 40 50 60 70 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c 6 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +5 dbm/tone @ 5.3v & +6 dbm/tone @ 5v & +10 dbm/tone @ 4.75v separated by 1mh z. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit cdma tx 869 ~ 894 +5.3 v / +5 v / +4.75 v 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 gain (db) frequency (mhz) 600 700 800 900 1000 1100 1200 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) frequency (mh z) 869~894 magnitude s21 (db) 20.1 20 19.7 magnitude s11 (db) - 14 - 14 - 12 magnitude s22 (db) - 13 - 13 - 13 output p1db (dbm) 29 29 27.5 output ip3 1) (dbm) 45 42.5 39 noise figure (db) 5.2 4.2 4.2 device voltage (v) 5.3 5 4.75 current (ma) 185 155 123 c1=100 pf c2=100 pf vcc=5 v rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=8 pf c4=4.7 pf l1=68 nh (coil inductor) l2=6.8 nh l3=3.3 nh 7 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +6 dbm/tone sep a- rated by 1mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 1626~1661 magnitude s21 (db) 16.5 magnitude s11 (db) - 14 magnitude s22 (db) - 18 output p1d b (dbm) 29 output ip3 1) (dbm) 37.5 noise figure (db) 3.8 device voltage (v) 5 current (ma) 155 1300 1400 1500 1600 1700 1800 1900 0 5 10 15 20 gain (db) frequency (mhz) 1300 1400 1500 1600 1700 1800 1900 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 1300 1400 1500 1600 1700 1800 1900 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) satellite phone 1626 ~1661 +5 v c1=100 pf c2=100 pf vcc=5 v rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=3 pf c4=1.5 pf l1=68 nh (coil inductor) l2=2.2 nh l3=1.5 nh 8 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +8 dbm/tone @ 5.3v & +6 dbm/tone @ 5v & +4 dbm/tone @ 4.75v separated by 1mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor (5v) applicat ion circuit frequency (mhz) 1920~1 980 magnitude s21 (db) 14.5 14.3 14 magnitude s11 (db) - 7 - 7 - 7 magnitude s22 (db) - 11 - 11 - 11 output p1db (dbm) 29 27 26.5 output ip3 1) (dbm) 46 42 40 noise figure (db) 5.6 4.6 4.1 device voltage (v) 5.3 5 4.75 current (ma) 185 155 123 wcdma rx 1920 ~ 1980 +5.3 v / +5 v / +4.75 v 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 1700 1800 1900 2000 2100 2200 0 5 10 15 20 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 1700 1800 1900 2000 2100 2200 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 1700 1800 1900 2000 2100 2200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c c1=68 pf c2=68 pf vcc rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=2.7 pf c4=1.8 pf l1=18 nh 1.5 mm 1.5 mm 9 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier output ip3 vs. tone power (frequency = 1950 mhz) 0 2 4 6 8 10 12 14 16 18 20 22 15 20 25 30 35 40 45 50 55 60 output ip3 (dbm) p out per tone (dbm) 5 v 4.75 v gain vs. temperature current vs. temperature output ip3 vs. tone power (frequency=1950mhz) p1db vs. temperature -60 -40 -20 0 20 40 60 80 100 80 100 120 140 160 180 200 current (ma) temperature ( o c) frequency = 1950 mhz -60 -40 -20 0 20 40 60 80 100 8 10 12 14 16 18 20 gain (db) temperature ( o c) frequency = 1950 mhz -60 -40 -20 0 20 40 60 80 100 16 20 24 28 32 36 p1db (dbm) temperature ( o c) frequency = 1950 mhz 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0 10 20 30 40 50 60 70 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c 10 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 5v / 155ma 4.75v / 123ma * test source : wcdma 4fa(3gpp 3.4 12 - 00), test model1 w/64 dpch, par=13db @ 0.01 % probability on ccdf / 1950mhz / 5mhz offset * test source : wcdma 1fa(3gpp 3.4 12 - 00), test model1 w/64 dpch, * test source : is - 95, 9ch. forward 30khz meas bw, 1950mhz / par =13db @ 0.01 % probability on ccdf / 1950mhz / 5mhz offset 750khz offset wcdma aclr C 4fa 10 11 12 13 14 15 16 17 -60 -55 -50 -45 -40 -35 aclr (dbc) output channel power (dbm) 5 v 4.75 v 11 12 13 14 15 16 17 18 19 20 21 22 23 -75 -70 -65 -60 -55 -50 -45 -40 -35 aclr (dbc) output channel power (dbm) 5 v 4.75 v wcdma aclr C 1fa cdma acpr C 1fa 11 12 13 14 15 16 17 18 19 20 21 22 23 -75 -70 -65 -60 -55 -50 -45 -40 -35 acpr (dbc) output channel power (dbm) 5 v 4.75 v 11 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +8 dbm/tone @ 5.3v & +6 dbm/tone @ 5v & +4 dbm/tone @ 4.75v separated by 1mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - paramete rs & k - factor (5v) application circuit frequency (mhz) 2110~2170 magnitude s21 (db) 13.2 13 12.8 magnitude s11 (db) - 6 - 6 - 6 magnitude s22 (db) - 12 - 12 - 12 output p1db (dbm) 28.5 27.5 2 7 output ip3 1) (dbm) 46 40.5 39.5 noise figure (db) 6.0 4.9 4.5 device voltage (v) 5.3 5 4.75 current (ma) 185 155 123 wcdma tx 2110 ~ 2170 +5.3 v / +5 v / +4.75 v 1900 2000 2100 2200 2300 2400 0 5 10 15 20 gain (db) frequency (mhz) 1900 2000 2100 2200 2300 2400 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 1900 2000 2100 2200 2300 2400 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=68 pf c2=68 pf vcc rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=2.2 pf c4=1.5 pf l1=15 nh (coil inductor) 0.5 mm 1 mm 12 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 5v / 155ma 4.75v / 123ma * test source : wcdma 4fa(3gpp 3.4 12 - 00), test model1 w/64 dpch, par=13db @ 0.01 % probability on ccdf wcdma aclr output ip3 vs. tone power (frequency = 2140 mhz) 0 2 4 6 8 10 12 14 16 18 20 22 15 20 25 30 35 40 45 50 55 60 output ip3 (dbm) p out per tone (dbm) 5 v 4.75 v 13 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at a n output power of +6 dbm/tone @ 5v & +4 dbm/tone @ 4.75v separated by 1mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 2500~2700 2500~2700 magnitude s21 (db) 11.5 11.5 magnitude s11 (db) - 7 - 7 magnitude s22 (db) - 10 - 10 output p1db (dbm) 29 28.5 output ip3 1) (dbm) 37 36 noise figure (db) 4.2 3.9 device voltage (v) 5 4.75 current (ma) 155 123 wimax 2500 ~ 2700 +5 v / 4.75v c1=68 pf c2=68 pf vcc=5 v / 4.75 v rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=2 pf c4=1.5 pf l1=15 nh (coil inductor) 1.5 mm 2000 2200 2400 2600 2800 3000 3200 0 5 10 15 20 gain (db) frequency (mhz) 2000 2200 2400 2600 2800 3000 3200 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 2000 2200 2400 2600 2800 3000 3200 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 14 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 5v / 155ma 4.75v / 123ma * test source : wcdma 4fa(3gpp 3.4 12 - 00), test model1 w/64 dpch, par=13d b @ 0.01 % probability on ccdf wcdma aclr 15 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +14 dbm/tone @ 5v & +13 dbm/tone @ 4.75v separated by 1mhz. boa rd layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 3500 3500 magnitu de s21 (db) 9 9 magnitude s11 (db) - 7 - 7 magnitude s22 (db) - 11 - 11 output p1db (dbm) 25 24.5 output ip3 1) (dbm) 42 40 noise figure (db) 5.4 4.8 device voltage (v) 5 4.75 current (ma) 155 123 wimax 3500 +5 v / 4.75v c1=68 pf c2=68 pf vcc=5 v / 4.75 v rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=1 pf c4=0.75 pf l1=15 nh (coil inductor) 3000 3200 3400 3600 3800 4000 4200 0 2 4 6 8 10 12 gain (db) frequency (mhz) 3000 3200 3400 3600 3800 4000 4200 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 3000 3200 3400 3600 3800 4000 4200 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 16 / 16 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 may 201 2 as x415 250 - 40 00 mhz mmic amplifier 1) oip3 is measured w ith two tones at an output power of +6 dbm/tone separated by 1 mhz. 2000 2200 2400 2600 2800 3000 0 5 10 15 20 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) c1=68 pf c2=68 pf vs = 5v rf in rf out c5=100pf c6=1 m f ASX415 d1=5.6v zener diode c3=1.8 pf c4=1.2 pf l1=15 nh (coil inductor) 3.5 mm 3.5 mm board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 2300 2500 2700 magnitude s21 (db) 12.9 13.1 12.8 magnitude s11 (db) - 5 - 8 - 18 magnitude s22 (db) - 18 - 18 - 18 output p1db (dbm) 27.5 output ip3 1) (dbm) 36 noise figu re (db) 5.1 device voltage (v) 5 current (ma) 155 lte 2300 ~ 2700 gain flatness < 0.5 db +5 v |
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